Design And Analysis of low Power Memory Elements for high Speed VLSI Circuits

dc.contributor.guideVaithiyanathan,D. or Kaur, Baljit
dc.coverage.spatial
dc.creator.researcherMishra, Alok
dc.date.accessioned2023-03-15T07:05:18Z
dc.date.available2023-03-15T07:05:18Z
dc.date.awarded2023
dc.date.completed2023
dc.date.registered2018
dc.description.abstractFor today and for the future technology Power Performance and Area (PPA) newlinewould be the most focused stuff in the memory design. By keeping this in mind newlinewe have started with the low power high speed memory elements. Initially an extremely low power true 1and#8722;and#981; clocking flip-flop is proposed using eighteen transistors newlineonly. The flip-flop is a synchronous bistable element that stores single-bit information. To design this Master Slave (MS) type architecture, topological, logical, and newlineadaptive coupling techniques are employed. The minimum number of transistors newlineare maintained by using above techniques, which comprises of complementary pass newlinetransistor logic and static complementary MOS logic. It also offers low power, a low newlinedelay that speeds up the flip-flops, and low complexity by reducing the transistor newlinecount. The proposed hybrid logic architecture has showed the highest percentage newlinei.e. 49.73% improvement in terms of power as compared to LRFF newline
dc.description.note
dc.format.accompanyingmaterialCD
dc.format.dimensions
dc.format.extent131
dc.identifier.urihttp://hdl.handle.net/10603/469442
dc.languageEnglish
dc.publisher.institutionElectronics and Communication Engineering
dc.publisher.placeNew Delhi
dc.publisher.universityNational Institute of Technology Delhi
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.titleDesign And Analysis of low Power Memory Elements for high Speed VLSI Circuits
dc.title.alternative
dc.type.degreePh.D.

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