Formulation of Slurry for the Process of Interconnect Metal  Cu Barrier Metal Ru Co Chemical Mechanical Planarization

Formulation of Slurry for the Process of Interconnect Metal Cu Barrier Metal Ru Co Chemical Mechanical Planarization

dc.contributor.guide	Venkatesh, R Prasanna
dc.coverage.spatial
dc.creator.researcher	Hazarika, Jenasree
dc.date.accessioned	2023-04-19T10:46:11Z
dc.date.available	2023-04-19T10:46:11Z
dc.date.awarded	2023
dc.date.completed	2023
dc.date.registered	2016
dc.description.abstract	Failure of Integrated Circuits (IC) due to maintenance of diffusion barrier property is a major concern in the semiconductor industry. Hence, cobalt (Co) and ruthenium (Ru) are introduced as new promising barrier metals. After deposition of the metals, better surface uniformity is required for further level metallization for which Chemical Mechanical Planarization (CMP) is opted. The main rational behind using CMP process is the removal of interconnect and barrier metal without excessive thinning. This demands a slurry which gives a removal selectivity of 1:1. In the present work, slurries giving desire removal selectivity for Ru/Cu and Co/Cu CMP are proposed. newline
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent
dc.identifier.uri	http://hdl.handle.net/10603/477129
dc.language	English
dc.publisher.institution	DEPARTMENT OF CHEMICAL ENGINEERING
dc.publisher.place	Guwahati
dc.publisher.university	Indian Institute of Technology Guwahati
dc.relation
dc.rights	self
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Chemical
dc.title	Formulation of Slurry for the Process of Interconnect Metal Cu Barrier Metal Ru Co Chemical Mechanical Planarization
dc.title.alternative
dc.type.degree	Ph.D.