Formulation of Slurry for the Process of Interconnect Metal Cu Barrier Metal Ru Co Chemical Mechanical Planarization

Abstract

Failure of Integrated Circuits (IC) due to maintenance of diffusion barrier property is a major concern in the semiconductor industry. Hence, cobalt (Co) and ruthenium (Ru) are introduced as new promising barrier metals. After deposition of the metals, better surface uniformity is required for further level metallization for which Chemical Mechanical Planarization (CMP) is opted. The main rational behind using CMP process is the removal of interconnect and barrier metal without excessive thinning. This demands a slurry which gives a removal selectivity of 1:1. In the present work, slurries giving desire removal selectivity for Ru/Cu and Co/Cu CMP are proposed. newline