Study of silicon surface passivation of single bilayer aluminium and hafnium oxide films deposited by atomic layer deposition technique

dc.contributor.guide	Vandana
dc.coverage.spatial
dc.creator.researcher	Meenakshi Devi
dc.date.accessioned	2025-03-21T09:11:19Z
dc.date.available	2025-03-21T09:11:19Z
dc.date.awarded	2025
dc.date.completed	2025
dc.date.registered	2018
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	ALL
dc.identifier.researcherid
dc.identifier.uri	http://hdl.handle.net/10603/629161
dc.language	English
dc.publisher.institution	Physical Sciences (CSIR-NPL)
dc.publisher.place	Ghaziabad
dc.publisher.university	Academy of Scientific and Innovative Research (AcSIR)
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Applied
dc.title	Study of silicon surface passivation of single bilayer aluminium and hafnium oxide films deposited by atomic layer deposition technique
dc.title.alternative	Study of silicon surface passivation of single/bilayer aluminium and hafnium oxide films deposited by atomic layer deposition technique
dc.type.degree	Ph.D.