Advanced III V heterostructure quantum well devices with enhancement mode e mode operation for high power switching analog rf applications

Abstract

This research work is directed towards the investigation of present III-V materials such as AlGaN, InAlN, AlN, InN and GaN based novel high electron-mobility transistors (HEMTs) for mixed-mode circuit design and simulation in future generation of III-V/Si integrated platforms. In designing the circuit design of efficient power switching devices, more than 10% of total power is lost in the form of conversion losses, constituting over 10 times higher volume than the worldand#8242;s supply of renewable energy. To reduce the conversion losses, a low-loss efficient power converters and inverters, employing an advanced generation of switching transistor based on Silicon Carbide (SiC) or Gallium Nitride (GaN) is needed. Compared to other devices, GaN devices offers the intense Figure-of-Merits (FOMs) considerably better than the state-of-the-art existing Silicon (Si) based power switching devices. Moreover, GaN have effective dielectric constant (and#949;), robust, chemically stable material and also very good thermal conductivity resistive to high temperature operation and surroundings. However, a wider development of the GaN power switching devices is restricted by the technology imperfection and, in specific, unavailability of a safe Enhancement mode (E-mode or Normally-OFF) transistor operation concept with a high value of positive threshold voltage (VT). newline newline newline