Fabrication and Characterization of Low Voltage Thin Film Transistor using Graphene and Metal Oxide Semiconductor

Abstract

Modern display technology requires higher resolution, wide area, mechanical flexibility, optical newlinetransparency, and lower cost. Over time enormous size cathode ray tube (CRO) based display has newlinebeen replaced by an active matrix light-emitting display (AMLED) based display. Active matrix newlinedisplay and Passive matrix display are the two main types of flat panel display technology. Up to newlinethe present time, active-matrix flat panel displays (AM-FPDs) have conquered the bigger market, newlineand that has been developed as an active matrix thin film transistor (TFT) since 1995. The flatpanel newlineLED-based display is thin, lightweight and has the ability to produce high-resolution images newlinewhich are very useful in many application such as television, monitors, smartphones, laptops, and newlinethe portable device. TFTs are the backbone of active matrix display technology and works as a newlinedriver (switching device) to drive a pixel in display on (light) or off (dark), therefore, newlinedevelopment of low-cost TFT is urgently required. Because of their high carrier mobility and easy newlinemanufacturing process, metal oxide TFT may be one ideal choice for this application. In 1940, newlineBell Telephone Laboratories demonstrated the first working example of a transistor while Weimer newlineat RCA Laboratories recognized the first working thin-film transistor (TFT) in 1962. [1-3] Thinfilm newlinetransistors are basically three-terminal metal oxide field effect transistor devices. In a TFT newlinestructure, the dielectric layer is sandwiched between the gate electrode and the semiconductor. The newlinecharge flow through the semiconducting layer between the source and drain electrodes can be newlinemodulated by the gate bias, which induces polarization in the dielectric layer. Thin-film transistors newlineare constructed using three main components; namely, i) a dielectric layer, ii) a semiconducting newlinematerial, and iii) metallic electrodes (source (S), drain (D) and gate (G)). Dielectric, active channel newlinelayer and their manufacturing process play a very important role in the performance of thin-film newlinetransistor