Process variation RF and soft error study on fed devices

Abstract

Many new device concepts, and new device structures have been newlineproposed, demonstrated, and investigated in the device community through newlinetheory, experiments and simulations, to tackle the short channel effects faced newlineby the conventional MOSFET devices. Field Effect Diode (FED) is one newlineamong them, and it was first proposed in 1996, and subsequently many newlinestudies have been published. Unlike the conventional MOSFET, the FED is newlinean asymmetric device, and has five terminals, (i) source, (ii) drain, and (iii) newlinesource side gate, (iv) drain side gate, and (v) substrate/ bulk terminal. The newlinesame device can be used as P or N type device. Application of appropriate newlinevoltages to the two gates brings the device into ON/OFF state. By reversing newlinethe polarity of the applied voltages both N and P type operations can be newlineachieved. newline