Investigation of light ion implantation damage and its annealing in P type silicon

dc.contributor.guide	Stephen, J. and Bhattacharyya, A.B.
dc.coverage.spatial	Department of Physics
dc.creator.researcher	Jain, A.
dc.date.accessioned	2025-06-11T09:20:55Z
dc.date.available	2025-06-11T09:20:55Z
dc.date.awarded	1977
dc.date.completed	1977
dc.date.registered
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	DVD
dc.format.dimensions
dc.format.extent
dc.identifier.researcherid
dc.identifier.uri	http://hdl.handle.net/10603/645643
dc.language	English
dc.publisher.institution	Department of Physics
dc.publisher.place	Delhi
dc.publisher.university	Indian Institute of Technology Delhi
dc.relation	TH448
dc.rights	university
dc.source.university	University
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Applied
dc.title	Investigation of light ion implantation damage and its annealing in P type silicon
dc.title.alternative
dc.type.degree	Ph.D.