Effect of doping on the electrical optical and thermal properties of GeSbSe glassy system

Abstract

Chalcogenide semiconductors consist of one or more chalcogen elements. Due to their unique properties, these glassy materials have been used in the fabrication of various technologically important devices. Ge-Sb-Se glassy alloys have been studied due to their good glass-forming tendency, high transparency and good thermal as well as chemical stability. The thesis focuses on the structural, optical, electrical and dielectric studies of quaternary Ge-Se-Sb-Ga and Ge-SeSb-Sn glassy systems. XRD diffractograms for Ge-Sb-Se-Ga and GeSb-Se-Sn glassy alloys affirms the amorphous nature of the prepared glassy alloys. FE-SEM micrographs reveal the uniform distribution of spherical grains over the substrates. EDS confirms the purity of the prepared glassy alloys. Optical bandgaps are found to increase with Ga-addition and decrease with Sn-addition. Dielectric analysis of dielectric parameters for Ge-Sb-Se-Ga and Ge-Sb-Se-Sn glassy systems is found to be consistent with CBH model. The study of the physical, structural, optical, electric and dielectric properties of Gadoped and Sn-doped Ge-Sb-Se glasses suggest the utilization of these glasses in various optical devices. newline