Investigation on doping enhanced piezo photoelectronic characteristics of ZNO nanostructures

Abstract

Nanostructures have revolutionized the industries which are not newlinelimited to electronics, environmental monitoring, catalysis, and energy newlineconversion. Among the various semiconductor candidates, ZnO nanostructures newlinehad applied enormously in enormous number of applications and at the same newlinetime reported for the better replacement material for the existing materials in newlinecertain fields. Since that, the new synthesis techniques, attaining new newlineproperties, improving the existing properties, and enhancing the application newlinefields of ZnO nanostructures becomes the major research focus nowadays. newlineHere we have considered the well-developed electronic applications of ZnO, newlinewhich is p-Si/n-ZnO based heterojunction diodes. Even though, p-Si/n-ZnO newlinebased heterojunction diode structures had shown outstanding behaviors, newlineimprovements such as improved charge carrier concentration, reduced barrier newlineheights, enhanced rectification ratio and long term stability are mandatory. newlineThese improvements could facilitate the practical implementation of these newlinedevices in various fields. newlineMeanwhile, ZnO nanostructures had replaced the well-known newlinematerial TiO2, in the field of photocatalysis. This is due to the very equivalent newlineenergy bandgap values, energy band positions, etc. Zinc Oxide (ZnO) is a type newlineof II-VI oxide material. When this material is at room temperature, its direct newlinebroad band gap is 3.37 eV, and it has a large exciton binding energy of 60 newlinemeV. Even though ZnO nanostructures has the ability to degrade the pollutant newlinevia the photocatalytic degradation reactions, viable photocatalytic mechanism newlinefor industrial application would require much more improvement in the newlinecatalytic nanostructures (ZnO). newline