Design and Reliability Improvement of Tunnel Field Effect Transistor

dc.contributor.guideSingh, Sajai Vir and Nigam, Kaushal
dc.creator.researcherKwatra, Priyanka
dc.date.accessioned2023-10-10T11:34:14Z
dc.date.available2023-10-10T11:34:14Z
dc.date.awarded2023
dc.date.completed2023
dc.date.registered2018
dc.description.abstractAvailable
dc.format.accompanyingmaterialNone
dc.format.extentxxxi, 189p., Synopsis-16
dc.identifier.urihttp://hdl.handle.net/10603/517218
dc.languageEnglish
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.publisher.placeNoida
dc.publisher.universityJaypee Institute of Information Technology
dc.rightsUniversity
dc.source.universityUniversity
dc.subject.keywordAnalogue/RF and linearity FOMs
dc.subject.keywordBand-to-band tunnelling
dc.subject.keywordBilateral tunnelling based TFET
dc.subject.keywordCMOS scaling
dc.subject.keywordDual gate oxide
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.subject.keywordInterface trap charges
dc.subject.keywordTunnel field effect transistor.
dc.titleDesign and Reliability Improvement of Tunnel Field Effect Transistor
dc.type.degreePh.D.

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