Liquid phase epitaxial growth of Inas, zn3as2 and zn3p2 and the effect of Swift heavy ion irradiation

Abstract

Semiconductor epitaxial materials play an important role in the newlinegrowth of electronic industries Among the several epitaxial techniques newlineLiquid Phase Epitaxy LPE is a simple and versatile method for the newlinerealization of optoelectronic devices with high perfection and distinct high newlinequality semiconductor layers Indium arsenide InAs zinc arsenide Zn3As2 and zinc phosphide Zn3P2 are the potential III V and II V compound semiconductors possess newlinepotential physical properties InAs is a III V compound semiconductor with a newlinedirect band gap of 0 35 eV at room temperature which therefore makes it an newlineimportant material for infrared emitters and detectors Zn3As2 and Zn3P2 are newlinethe new class of II V compound semiconductors with direct band gap of 1 0 newlineand 1 5 eV respectively These new class of semiconductors have attractive newlinephysical properties for several applications such as IR sensors lasers and newlinesolar cells newline newline