Study of subthreshold analog and RF performance trends of multi gate MOSFETs in sub nanometer regime

dc.contributor.guide	Sarkar, C.K.
dc.coverage.spatial
dc.creator.researcher	Kundu, Atanu
dc.date.accessioned	2018-07-12T11:59:58Z
dc.date.available	2018-07-12T11:59:58Z
dc.date.awarded	2016
dc.date.completed	2016
dc.date.registered	n.d.
dc.description.abstract	None newline
dc.description.note	References p. 165-168
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	xv, 177 p.
dc.identifier.uri	http://hdl.handle.net/10603/207748
dc.language	English
dc.publisher.institution	Department of Electronics and Tele-Communication Engineering
dc.publisher.place	Kolkata
dc.publisher.university	Jadavpur University
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Metal Oxide Semiconductor Field-Effect Transistor (MOSFET)
dc.subject.keyword	Metal Oxide Semiconductors (MOS)
dc.subject.keyword	Semiconductor devices
dc.title	Study of subthreshold analog and RF performance trends of multi gate MOSFETs in sub nanometer regime
dc.title.alternative
dc.type.degree	Ph.D.