Modeling and Simulation of AlGaN GaN AlInN Metal Oxide Semiconductor High Electron Mobility Transistors

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dc.contributor.guideJ Charles Pravin
dc.coverage.spatial
dc.creator.researcherSandeep V
dc.date.accessioned2021-12-14T09:36:31Z
dc.date.available2021-12-14T09:36:31Z
dc.date.awarded2021
dc.date.completed2021
dc.date.registered2017
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialDVD
dc.format.dimensions
dc.format.extent
dc.identifier.urihttp://hdl.handle.net/10603/351261
dc.languageEnglish
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.publisher.placeVirudhunagar
dc.publisher.universityKalasalingam University
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.titleModeling and Simulation of AlGaN GaN AlInN Metal Oxide Semiconductor High Electron Mobility Transistors
dc.title.alternative
dc.type.degreePh.D.

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