Modeling of subthreshold characteristics of short channel conventional pocket implanted and dual material gate MOSFETs

dc.contributor.guide	Sarkar, C.K. and Mallik, A.
dc.coverage.spatial
dc.creator.researcher	Baishya, Srimanta
dc.date.accessioned	2017-11-13T09:27:31Z
dc.date.available	2017-11-13T09:27:31Z
dc.date.awarded	2007
dc.date.completed	2007
dc.date.registered	n.d.
dc.description.abstract	None newline
dc.description.note	References p. 131-132
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	134 p.
dc.identifier.uri	http://hdl.handle.net/10603/180641
dc.language	English
dc.publisher.institution	Department of Electronics and Tele-Communication Engineering
dc.publisher.place	Kolkata
dc.publisher.university	Jadavpur University
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Metal Oxide Semiconductor Field-Effect Transistor (MOSFET)
dc.subject.keyword	Metal Oxide Semiconductors (MOS)
dc.subject.keyword	Semiconductor devices
dc.subject.keyword	Short channel MOS
dc.title	Modeling of subthreshold characteristics of short channel conventional pocket implanted and dual material gate MOSFETs
dc.title.alternative
dc.type.degree	Ph.D.