Gasb An approach to boost the efficiency of third generation solar cells

Abstract

newline The efficiency of single-junction solar cell is increasing day by day and approaching newlinetowards their fundamental Shockley-Queisser limit. This is true for well-established newlinecommercial photovoltaic (PV) technologies like silicon. In order to get high efficiency in newlinesolar cell (beyond Silicon), new concepts are needed to be implemented, which will newlineovercome the fundamental energy conversion mechanism limitations of single-junction newlinesolar cell. In order to make this approach successful, it is advantageous to leave the newlineexisting technologies and integrate new solar cell architectures to solar industries such as newlineIII-V material based single junction, tandem and intermediate band solar cells (IBSC), newlineetc. newlineThis thesis focuses on the optical and electronic properties of GaSb assisted newlinesingle junction, dual junction, dual junction assisted with quantum superlattice and newlinequantum ratchet embedded IBSC (QRIBSCs) for the development of high efficiency newlinesolar cell. Far-infrared active GaSb having direct band gap, high value of dielectric newlineconstant, high stability towards variation in temperature has emerged itself as a