Terahertz properties of III V Bismide semiconductors

dc.contributor.guideKini, Rajeev N
dc.coverage.spatial
dc.creator.researcherC P, Vaisakh
dc.date.accessioned2022-12-28T11:33:02Z
dc.date.available2022-12-28T11:33:02Z
dc.date.awarded2019
dc.date.completed2019
dc.date.registered2012
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialNone
dc.format.dimensions
dc.format.extent
dc.identifier.urihttp://hdl.handle.net/10603/432970
dc.languageEnglish
dc.publisher.institutionSchool of Physics
dc.publisher.placeThiruvananthapuram
dc.publisher.universityIndian Institute of Science Education and Research (IISER) Thiruvananthapuram
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Condensed Matter
dc.titleTerahertz properties of III V Bismide semiconductors
dc.title.alternative
dc.type.degreePh.D.

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