Precursor aging period ci f and br doped ternary cdzns this films suited for optoelectronic application

dc.contributor.guideSel van G.
dc.coverage.spatial
dc.creator.researcherAbubacker M.P.
dc.date.accessioned2018-09-18T05:15:54Z
dc.date.available2018-09-18T05:15:54Z
dc.date.awarded
dc.date.completed2016
dc.date.registered2013
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialDVD
dc.format.dimensions
dc.format.extent148
dc.identifier.urihttp://hdl.handle.net/10603/215398
dc.languageEnglish
dc.publisher.institutionDepartment of Physics
dc.publisher.placeTiruchirappalli
dc.publisher.universityBharathidasan University
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.titlePrecursor aging period ci f and br doped ternary cdzns this films suited for optoelectronic application
dc.title.alternative
dc.type.degreePh.D.

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