Modeling ambipolar behavior under high current injection regimes in layered semiconductor device structures

Abstract

This thesis develops novel insight towards understanding high current injection phenomenon in bipolar structures High current injection mechanisms are ubiquitously connected to reliability issues both in advanced nano scale as well as high power devices which are lifeline of the semiconductor industry In absence of accurate high current breakdown models an attempt has been made to develop physical insights into basic layered semiconductor structures that are present as parasitic elements in a