Metal work function induced threshold voltage variability in multi gate transistors

dc.contributor.guide	Ganguly, Udayan and Ganguly, Swaroop
dc.coverage.spatial	Department of Electrical Engineering
dc.creator.researcher	Penugonda, Harsha Vardhan
dc.date.accessioned	2023-05-04T08:08:18Z
dc.date.available	2023-05-04T08:08:18Z
dc.date.awarded	2019
dc.date.completed	2019
dc.date.registered	2013
dc.description.abstract	Abstract attached newline newline
dc.description.note	NA
dc.format.accompanyingmaterial	DVD
dc.format.dimensions	NA
dc.format.extent	NA
dc.identifier.uri	http://hdl.handle.net/10603/481183
dc.language	English
dc.publisher.institution	Department of Electrical Engineering
dc.publisher.place	Mumbai
dc.publisher.university	Indian Institute of Technology Bombay
dc.relation	NA
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Electrical and Electronic
dc.title	Metal work function induced threshold voltage variability in multi gate transistors
dc.title.alternative	Na
dc.type.degree	Ph.D.