Dummy Gate and Buried Oxide Engineering of Power MOSFETs for sub 200 V Applications

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dc.contributor.guideDr. R. Mahapatra
dc.coverage.spatial
dc.creator.researcherJagamohan Sahoo
dc.date.accessioned2023-02-20T04:19:44Z
dc.date.available2023-02-20T04:19:44Z
dc.date.awarded2022
dc.date.completed2021
dc.date.registered2017
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialDVD
dc.format.dimensions
dc.format.extent
dc.identifier.urihttp://hdl.handle.net/10603/463867
dc.languageEnglish
dc.publisher.institutionElectronics and Communication Engineering
dc.publisher.placeDurgapur
dc.publisher.universityNational Institute of Technology Durgapur
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordComputer Science
dc.subject.keywordEngineering and Technology
dc.subject.keywordTelecommunications
dc.titleDummy Gate and Buried Oxide Engineering of Power MOSFETs for sub 200 V Applications
dc.title.alternative
dc.type.degreePh.D.

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