Fabrication and characterization of metal ferroelectric high k silicon gate stack for non volatile memory applications

dc.contributor.guide	Singh, Rajat Kumar and Singh, B. R.
dc.coverage.spatial
dc.creator.researcher	Singh, Prashant
dc.date.accessioned	2022-05-06T12:25:24Z
dc.date.available	2022-05-06T12:25:24Z
dc.date.awarded	2019
dc.date.completed	2018
dc.date.registered	2014
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	xxi, 141p.
dc.identifier.uri	http://hdl.handle.net/10603/378808
dc.language	English
dc.publisher.institution	Electronics and Communication Engineering
dc.publisher.place	Allahabad
dc.publisher.university	Indian Institute of Information Technology, Allahabad
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Electrical and Electronic
dc.title	Fabrication and characterization of metal ferroelectric high k silicon gate stack for non volatile memory applications
dc.title.alternative
dc.type.degree	Ph.D.