Carrier selective passivating materials for application in crystalline silicon solar cells

Abstract

Crystalline silicon (c-Si) solar cells are the backbone of the photovoltaic industry due to their proven efficiency and reliability. Enhancing their performance relies heavily on effective surface passivation, where carrier-selective passivating contacts (CSPCs) have emerged as a transformative solution. CSPCs enable simultaneous surface passivation and selective charge carrier transport, significantly reducing recombination losses and boosting overall cell efficiency. newline newlineThis abstract reviews recent advancements in CSPC materials and mechanisms, highlighting their role in shaping next-generation high-efficiency c-Si solar cells. Key materials such as transition metal oxides (e.g., TiOand#8322;, ZnO for electron selectivity; NiOx, WOx for hole selectivity), doped polycrystalline silicon (TOPCon), and organic-inorganic hybrids (e.g., PEDOT:PSS) are evaluated for their passivation quality and carrier selectivity. newline newlineAdvanced deposition techniques like atomic layer deposition (ALD) and chemical vapor deposition (CVD) allow precise control over layer uniformity and thickness, essential for optimal performance. Integration into modern architectures such as PERC, HIT, and IBC has further pushed efficiency limits. newline newlineWe also discuss challenges related to interface engineering, temperature stability, scalability, and cost-effectiveness, along with simulation insights using tools like Sentaurus TCAD. With their potential to increase energy yield and reduce production costs, CSPCs are poised to revolutionize silicon PV technology and accelerate the shift toward sustainable energy systems. newline