Design of Label Free Electrical Biosensor with InGaAs InP Hetero MOSFET

Abstract

The continuous improvement in complementary metal oxide semiconductor (CMOS) newlinetechnology has been sustained mainly due to the device dimension scaling to achieve newlinesmaller, faster, cheaper devices that leads to high speed and high packing density. Further, a newlinefew undesirable phenomena of the scaled devices significantly increase as the effective newlinechannel length is comparable with depletion width at source and drain. To overcome these newlineissues in the nano-scale regime, a group III-V compound semiconductor materials are newlineintroduced for the construction of an efficient MOSFET due to the small effective mass, and newlinelow effective density of states in the conduction band. newlineRecently compound semiconductor materials are frequently used in biosensing applications newlinefor their chemical inertness, and high carrier velocity along with combined piezoelectric and newlinespontaneous polarization effects. This research work reported a design of dielectric newlinemodulation (DM) technique based on highly sensitive InP/InGaAs/InP hetero channel newlinedouble gate (H-DG MOSFET) biosensor for accurate identification of the bio-targets such newlineas protein, streptavidin, uricase, biotin, APTES, and keratin with the incorporation of nano newlinecavity near the source and drain ends within the gate dielectric for sensing the neutral and newlinecharged analytes for analysing the sensitivity of the device. However, it deteriorates the newlinedevice sensitivity by use of a single work function at the gate electrode which enhances the newlinehot electron at the drain. Thus, the use of dual material in the gate electrode gives a step newlineprofile at the junction for which there is an improvement in device sensitivity. newlineSo, a hetero channel dual material double gate (H-DMDG MOSFET) biosensor is newlineimplemented to improve the device performance. Further, by utilizing the concept of bio newlinetarget location and fill factor position, a DM-H-DMDG MOSFET biosensor is implemented newlinefor improving the different device sensitivity parameters. However, there is a greater newlinenumber of localized charges are present at the interface due to