Investigations of low energy and swift heavy ions on the optical and electrical properties of silicon carbide

Abstract

Semiconductor power devices fabricated on silicon si material have low operational limits these devices would require cooling systems to keep them under the operating temperature silicon carbide sic being a wide band gap semiconductor wbg surpasses si s theoretical limits the devices based on sic are thinner and have lower on resistance providing lower conduction losses which increases the overall efficiency si schottky diodes are commercially available typically at voltages lower than 300 v while the commercial sic schottky diodes are rated at 600 v wbg semiconductor based power devices also exhibit excellent reverse recovery characteristics with less reverse recovery current switching losses and electromagnetic interferences emi are reduced they also have low switching losses which means they can operate at higher frequencies I e20 khz this is not possible with si based devices in power levels of more than a few tens of kilowatts in this research work 4h 6h sic wafers were subjected to swift heavy ion shi implantation and low energy ion implantation investigations have been carried out on the optical and morphological properties of implanted sic and the subsequent fabrication of device structures on the samples. newline