TCAD design and analysis of electrostatically doped tunnel FET based on different materials for circuit applications

Abstract

The Double-Gate (DG) Tunnel Field Effect Transistor (TFET)s have proven their newlineability to achieve the most important requirement of semiconductor industry such as newlinesteep-slope (lt 60 mV/decade) due to utilization of Band-to-Band Tunnelling (BTBT) newlineas a switching mechanism instead of thermionic emission. However, the performance newlineof DG-TFETs are still limited to ambipolar conduction, low on current (ION), high newlinethreshold voltage (Vth) and high thermal budget. Although, charge-plasma based newlineElectrostatically-doped (ED) TFET such as dopingless (DL) and junctionless (JL) newlineare the alternative solutions for low-thermal budget, but still a lot needs to be newlineinvestigated beforehand as discussed in Chapter 1. In this regard, the different newlinematerials such as Palladium Silicide (Pd2Si (and#981;=5.3 eV)) source electrode along with newlineferroelectric materials in control gate (CG) based DG-JL-TFET and CH3NH3PbI3- newlineDL-TFET have been designed in SILVACO TCAD Environment. The device and newlinetool methodology used for designing the aforementioned devices in SILVACO newlineTCAD Environment has been elaborated in newline