Heterojunction of Bi2Se3 and epitaxially grown GaN nanostructures on oxide based substrates for self powered broadband photodetectors

dc.contributor.guide	Sunil Singh Kushvaha
dc.coverage.spatial
dc.creator.researcher	Vishnu Aggarwal
dc.date.accessioned	2025-03-21T09:15:29Z
dc.date.available	2025-03-21T09:15:29Z
dc.date.awarded	2025
dc.date.completed	2025
dc.date.registered	2019
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions
dc.format.extent	ALL
dc.identifier.researcherid
dc.identifier.uri	http://hdl.handle.net/10603/629166
dc.language	English
dc.publisher.institution	Physical Sciences (CSIR-NPL)
dc.publisher.place	Ghaziabad
dc.publisher.university	Academy of Scientific and Innovative Research (AcSIR)
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Applied
dc.title	Heterojunction of Bi2Se3 and epitaxially grown GaN nanostructures on oxide based substrates for self powered broadband photodetectors
dc.title.alternative	Heterojunction of Bi2Se3 and epitaxially grown GaN nanostructures on oxide-based substrates for self-powered broadband photodetectors
dc.type.degree	Ph.D.