Photo and Electroluminescence studies on Gallium based Oxide Nanophosphors

Abstract

Nanophosphor materials have been extensively investigated during the last decade due to newlinetheir potential applications for various high-performance and novel displays and devices. newlineNanocrystalline phosphors exhibit markedly different structural, optical and electrical newlineproperties as compared to those in the bulk form. Out of these, the ones suited as newlinephosphor host material show considerable size dependent luminescence properties when newlinean impurity is added in a quantum-confined structure. The impurity incorporation newlinetransfers the dominant recombination process from the surface states to induced impurity newlinestates and its induced-transition can be localized as in the case of the transition metals or newlinethe rare earth elements, the efficiency radiative transitions of impurity-induced emission newlineincreases significantly. The emission intensity and life time properties of the phosphors newlineare, therefore, modified in nanocrystallized form. Obviously, all these properties of a newlinedoped nanocrystalline phosphor material are very attractive for optoelectronic device newlineapplications. newline