Numerical modeling and analysis of graphene based field effect transistors

Abstract

Graphene based transistors are being explored extensively and are now considered as a promising candidate for post silicon electronics However the absence of the energy gap in graphene sheet is proved to be a major limitation for FETs as it causes poor ON OFF current ratio for digital electronics and poor intrinsic gain for analog electronics To find methods to improve the functionality and performance of these devices quantum simulations is developed by solving ballistic non equilibrium G