Investigation of Au free AlGaN GaN HEMT on Silicon with substrate transfer process From Ohmic contacts to RF performance

dc.contributor.guideNath, Digbijoy and Sen, Prosenjit
dc.coverage.spatial
dc.creator.researcherNiranjan, S.
dc.date.accessioned2024-07-23T10:15:27Z
dc.date.available2024-07-23T10:15:27Z
dc.date.awarded2024
dc.date.completed2022
dc.date.registered2017
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialDVD
dc.format.dimensions
dc.format.extent
dc.identifier.urihttp://hdl.handle.net/10603/577941
dc.languageEnglish
dc.publisher.institutionCentre for Nano Science and Engineering
dc.publisher.placeBangalore
dc.publisher.universityIndian Institute of Science Bangalore
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordMultidisciplinary
dc.subject.keywordNanoscience and Nanotechnology
dc.subject.keywordPhysical Sciences
dc.titleInvestigation of Au free AlGaN GaN HEMT on Silicon with substrate transfer process From Ohmic contacts to RF performance
dc.title.alternative
dc.type.degreePh.D.

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