Emerging High and#954; Germanium Channel Integration on cost effective Si Platform for Next Gen CMOS

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dc.contributor.guideSharma, Satinder Kumar
dc.coverage.spatial
dc.creator.researcherChoudhary, Sumit
dc.date.accessioned2024-01-18T12:47:59Z
dc.date.available2024-01-18T12:47:59Z
dc.date.awarded2023
dc.date.completed2023
dc.date.registered2017
dc.description.abstractnewline
dc.description.note
dc.format.accompanyingmaterialDVD
dc.format.dimensions
dc.format.extentxxiii, 193
dc.identifier.urihttp://hdl.handle.net/10603/540558
dc.languageEnglish
dc.publisher.institutionSchool of Computing and Electrical Engineering
dc.publisher.placeMandi
dc.publisher.universityIndian Institute of Technology Mandi
dc.relation
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.titleEmerging High and#954; Germanium Channel Integration on cost effective Si Platform for Next Gen CMOS
dc.title.alternative
dc.type.degreePh.D.

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