Modeling deep submicron MOS transistor for ultra low-power analog and RF circuits design

dc.contributor.guideJain, R. C. and Bhattacharyya, A. B.
dc.creator.researcherSingh, Kirmender
dc.date.accessioned2018-07-17T09:00:58Z
dc.date.available2018-07-17T09:00:58Z
dc.date.awarded07/06/2018
dc.date.completed07/06/2018
dc.date.registered09/07/2013
dc.description.abstractincluded newline
dc.format.accompanyingmaterialNone
dc.identifier.urihttp://hdl.handle.net/10603/208513
dc.languageEnglish
dc.publisher.institutionDepartment of Electronic & Communication
dc.publisher.placeNoida
dc.publisher.universityJaypee Institute of Information Technology
dc.rightsuniversity
dc.source.universityUniversity
dc.subject.keywordelectronics
dc.subject.keywordInternet of Things
dc.subject.keywordMOS transistor
dc.subject.keywordnanoscale CMOS
dc.subject.keywordVLSI community
dc.titleModeling deep submicron MOS transistor for ultra low-power analog and RF circuits design
dc.type.degreePh.D.

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