Effect of interface strain and phonon confinement on thermoelectric efficiency of gan inxga1 xn gan sl

dc.contributor.guide	Sahoo,Bijaya Kumar
dc.coverage.spatial
dc.creator.researcher	Sahu,Subhranshu Sekhar
dc.date.accessioned	2023-02-06T06:20:11Z
dc.date.available	2023-02-06T06:20:11Z
dc.date.awarded	2022
dc.date.completed	2021
dc.date.registered	2017
dc.description.abstract	Attached newline
dc.description.note
dc.format.accompanyingmaterial	None
dc.format.dimensions	30 cm x 21 cm
dc.format.extent	xx,131
dc.identifier.uri	http://hdl.handle.net/10603/456213
dc.language	English
dc.publisher.institution	Department of Physics
dc.publisher.place	Raipur
dc.publisher.university	National Institute of Technology Raipur
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Figure of merit
dc.subject.keyword	Interfacial Polarization electric field
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Applied
dc.subject.keyword	Seebeckcoefficient
dc.subject.keyword	Thermal conductivity
dc.title	Effect of interface strain and phonon confinement on thermoelectric efficiency of gan inxga1 xn gan sl
dc.title.alternative
dc.type.degree	Ph.D.