Properties of 2deg and high performance high electron mobility transistors in algan gan hetero structures

dc.contributor.guide	Saha, Dipankar
dc.coverage.spatial	Department of Electrical Engineering
dc.creator.researcher	Upadhyay, Bhanu Bhakta
dc.date.accessioned	2023-06-27T12:16:41Z
dc.date.available	2023-06-27T12:16:41Z
dc.date.awarded	2021
dc.date.completed	2021
dc.date.registered	2014
dc.description.abstract	Abstract attached newline newline
dc.description.note	NA
dc.format.accompanyingmaterial	DVD
dc.format.dimensions	NA
dc.format.extent	NA
dc.identifier.uri	http://hdl.handle.net/10603/494887
dc.language	English
dc.publisher.institution	Department of Electrical Engineering
dc.publisher.place	Mumbai
dc.publisher.university	Indian Institute of Technology Bombay
dc.relation	NA
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Electrical and Electronic
dc.title	Properties of 2deg and high performance high electron mobility transistors in algan gan hetero structures
dc.title.alternative	Na
dc.type.degree	Ph.D.