Thin film growth and characterization of metal doped oxide materials for gas sensor and solar cell applications

Abstract

With the development of science and smart technology, gas sensors and solar cells are newlineof great importance for the power requirements, health aspects of society and industry. newlineGas sensors and solar cells are becoming increasingly important as science and smart newlinetechnologies are trying to meet the future power requirements and health of society. newlineVanadium pentoxide (V2O5) is an n-type semiconductor that is both stable and has a newlinehigh oxidation state. It has many interesting features, including multi valance layered newlinestructure, wide optical band gap, good chemical and thermal stability, excellent newlinethermoelectric and electrochromic properties. newlineV2O5 is an active material in manufacturing many solid-state devices such as gas newlinesensors, optical-electrical switches, electrochromic devices, high-capacity lithium newlinebatteries, display systems, colour filters, catalysts and smart windows. The research newlinework exploits the possibility of metal doped V2O5 thin film materials for gas sensor newlineand photonic device applications. newlineThe pure V2O5, Zinc (Zn) and Magnesium (Mg) doped and codoped V2O5 thin films newlinecan be prepared by the spray pyrolysis technique. The thickness of the prepared films newlinewas determined using the direct weight gain method. XRD, UV-Vis spectroscopy, newlinePhotoluminescence spectrum, FESEM techniques were adopted to elucidate the newlinemorphological, structural and optical properties of the prepared thin films. The gas newlinesensor measurements were carried to measure the sensitivity and selectivity of the newlinefabricated thin films. newlineThe Scherer rule was employed to determine the crystallite size of the thin films and newlinewas found to be enhanced. Field Emission Scanning Electron Microscopy study newlinereveals that the surface morphology modifications, increase with Zn and Mg doping. newlineThe surface topography of the prepared thin films was also studied using AFM and newlinewas found to be improved. The wide range of energy bandgap (Eg) from 3.25 eV to newline4.02eV of the prepared thin films was found and have improved with doping newlineconcentration. newlineThe Zn, Mg doping and Zn-Mg codop