Investigation on Ferroelectric Polarization Based Resistive Switching Random Access Memory ReRAM Devices

dc.contributor.guide	Amiruddin, R
dc.coverage.spatial
dc.creator.researcher	Shahnaz Kossar
dc.date.accessioned	2023-05-11T10:01:36Z
dc.date.available	2023-05-11T10:01:36Z
dc.date.awarded	2023
dc.date.completed	2023
dc.date.registered	2017
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	DVD
dc.format.dimensions
dc.format.extent
dc.identifier.uri	http://hdl.handle.net/10603/482462
dc.language	English
dc.publisher.institution	Department of Physics
dc.publisher.place	Chennai
dc.publisher.university	B S Abdur Rahman Crescent Institute of Science and Technology
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Particles and Fields
dc.title	Investigation on Ferroelectric Polarization Based Resistive Switching Random Access Memory ReRAM Devices
dc.title.alternative
dc.type.degree	Ph.D.