Characterization of silar deposited binary and ternary compound semiconductor

dc.contributor.guide	Rao, Gowrish K
dc.coverage.spatial	Physics
dc.creator.researcher	Ashith, V K
dc.date.accessioned	2020-11-24T05:49:43Z
dc.date.available	2020-11-24T05:49:43Z
dc.date.awarded	2020
dc.date.completed	2020
dc.date.registered	2014
dc.description.abstract	Available newline
dc.description.note	Bibliography p.117-137
dc.format.accompanyingmaterial	None
dc.format.dimensions	-
dc.format.extent	137 p.
dc.identifier.uri	http://hdl.handle.net/10603/307251
dc.language	English
dc.publisher.institution	Manipal Institute of Technology
dc.publisher.place	Manipal
dc.publisher.university	Manipal Academy of Higher Education
dc.relation	No. of references 230
dc.rights	university
dc.source.university	University
dc.subject.keyword	Heterojunctions
dc.subject.keyword	II-VI semiconductors; SILAR
dc.subject.keyword	Thermal evaporation
dc.title	Characterization of silar deposited binary and ternary compound semiconductor
dc.type.degree	Ph.D.