An Analytical study on temperature dependence of nanoscale digital CMOS circuits using charge based α-power MOSFET model and an illustrative design application of a digital temperature sensor

dc.contributor.guide	Srivastava, Shweta and Bhattacharyya, A.B.
dc.creator.researcher	Kalra, Shruti
dc.date.accessioned	2018-09-17T11:36:32Z
dc.date.available	2018-09-17T11:36:32Z
dc.date.awarded	27/08/2018
dc.date.completed	27/08/2018
dc.date.registered	31/01/2012
dc.description.abstract	included newline
dc.format.accompanyingmaterial	None
dc.identifier.uri	http://hdl.handle.net/10603/215293
dc.language	English
dc.publisher.institution	Department of Electronics and Communication Engineering
dc.publisher.place	Noida
dc.publisher.university	Jaypee Institute of Information Technology
dc.rights	university
dc.source.university	University
dc.subject.keyword	MOSFET technology
dc.subject.keyword	parameter fluctuations
dc.subject.keyword	pre SPICE
dc.subject.keyword	silicon foundries
dc.subject.keyword	ultra-large-scaleintegrated chips
dc.title	An Analytical study on temperature dependence of nanoscale digital CMOS circuits using charge based α-power MOSFET model and an illustrative design application of a digital temperature sensor
dc.type.degree	Ph.D.