Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies

Abstract

Recently, The Growing Demand Of Low-Power And Low-Cost Wireless Transceivers, Various Integrated Circuit (Ic) Technologies Are Competing To Integrate More Radio Frequency (Rf) Functions Onto A Single Chip As Well As To Construct Discrete Rf Building Blocks. With The Development Of Modern Silicon Technology, More And More High-Frequency Circuits Can Be Implemented In Standard Complementary Metal-Oxide- Semiconductor (Cmos) Processes. Since Long Time, The Rf Switch Has Been Dominated By Discrete Components Using Pin Diodes And Mesfets. Modern Solid-State Rf Technologies Are Utilized For Their Fast Switching Speeds, Commercial Availability, Low Cost, And Ruggedness. The Feasibility Of Rf Ics In Standard Cmos Process Is Established And Trend In Putting All Components In A System-On-Chip Includes Integration Of The Transceiver (T/R) Antenna Switch. newline newlineIn This Thesis, We Have Designed A Double-Pole Four-Throw (Dp4t) Rf Switch To Enhance Its Performance For The Next Generation Wireless Communication Systems. Earlier, Designs Of The Dp4t Switch Uses Single-Gate N-Type Mosfet, Which Requires High Control Voltage (3.0 V To 5.0 V) To Operate And A Large Internal Resistances, Contact Resistances And Capacitances Are Produced In Design. This High Value Of Control Voltage Is Not Suitable For Modern Low Power Portable Devices, Which Require Smaller Power Consumption. Therefore, We Have Proposed A Novel Dp4t Switch By Using Double-Gate (Dg) Cmos Technology For The Purpose Of Various Rf Application.