Development of Thermally Stimulated Exoelectron Emission _TSEE_ technique for the detection and characterisation of surface and interface defects in silicon _Si_ and gallium arsenide _GaAs_

dc.contributor.guide	Bhoraskar, S V
dc.coverage.spatial	Physics
dc.creator.researcher	Railkar, Tarak A
dc.date.accessioned	2017-03-16T06:46:06Z
dc.date.available	2017-03-16T06:46:06Z
dc.date.awarded	n.d.
dc.date.completed	1994
dc.date.registered	n.d.
dc.description.abstract	Abstract not available newline
dc.description.note	-
dc.format.accompanyingmaterial	None
dc.format.dimensions	-
dc.format.extent	141p.
dc.identifier.uri	http://hdl.handle.net/10603/140226
dc.language	English
dc.publisher.institution	Department of Physics
dc.publisher.place	Pune
dc.publisher.university	Savitribai Phule Pune University
dc.relation	-
dc.rights	university
dc.source.university	University
dc.subject.keyword	Semiconductors
dc.subject.keyword	Gamma irradiation
dc.subject.keyword	Gallium arsenide
dc.subject.keyword	Exoemission
dc.subject.keyword	Polycrystalline
dc.title	Development of Thermally Stimulated Exoelectron Emission _TSEE_ technique for the detection and characterisation of surface and interface defects in silicon _Si_ and gallium arsenide _GaAs_
dc.title.alternative	-
dc.type.degree	Ph.D.