Studies on the _i_ depth distribution of the carrier lifetime in crystalline silicon and _ii_ damage induced in MOS structure by MeV energy electrons and swift heavy ions

dc.contributor.guide	Dhole, S D
dc.coverage.spatial	Physics
dc.creator.researcher	Shinde, Ninad Shankar
dc.date.accessioned	2017-02-02T12:04:28Z
dc.date.available	2017-02-02T12:04:28Z
dc.date.awarded	n.d.
dc.date.completed	2003
dc.date.registered	n.d.
dc.description.abstract	Abstract not available newline
dc.description.note	-
dc.format.accompanyingmaterial	None
dc.format.dimensions	-
dc.format.extent	iv, 217p.
dc.identifier.uri	http://hdl.handle.net/10603/133569
dc.language	English
dc.publisher.institution	Department of Physics
dc.publisher.place	Pune
dc.publisher.university	Savitribai Phule Pune University
dc.relation	-
dc.rights	university
dc.source.university	University
dc.subject.keyword	Radiation sources, Theory of carrier recombination, Trap density estimation, MOS parameters, MOSFET
dc.title	Studies on the _i_ depth distribution of the carrier lifetime in crystalline silicon and _ii_ damage induced in MOS structure by MeV energy electrons and swift heavy ions
dc.title.alternative	-
dc.type.degree	Ph.D.