Analytical Modeling and TCAD Simulation of  In2O5Sn Transparent Gate Electrode Recessed Channel MOSFET for High  Performance Applications

dc.contributor.guide	Tripathi, M. M. and Chaujar, Rishu
dc.coverage.spatial
dc.creator.researcher	Kumar, Ajay
dc.date.accessioned	2023-05-11T09:45:31Z
dc.date.available	2023-05-11T09:45:31Z
dc.date.awarded	2020
dc.date.completed	2019
dc.date.registered	2016
dc.description.abstract	Available
dc.description.note
dc.format.accompanyingmaterial	CD
dc.format.dimensions	210 x 297 mm
dc.format.extent	xxv, 270p
dc.identifier.uri	http://hdl.handle.net/10603/482436
dc.language	English
dc.publisher.institution	Electrical Engineering
dc.publisher.place	Delhi
dc.publisher.university	Delhi Technological University
dc.relation
dc.rights	university
dc.source.university	University
dc.subject.keyword	Engineering
dc.subject.keyword	Engineering and Technology
dc.subject.keyword	Engineering Electrical and Electronic
dc.title	Analytical Modeling and TCAD Simulation of In2O5Sn Transparent Gate Electrode Recessed Channel MOSFET for High Performance Applications
dc.title.alternative
dc.type.degree	Ph.D.