Mathematical Modeling of 3d Fully Depleted Double Gate Silicon on Insulator Mosfets with the Influence of Back Gate Bias

dc.contributor.guide
dc.coverage.spatial
dc.creator.researcher	Neha Goel
dc.date.accessioned	2020-03-20T11:48:32Z
dc.date.available	2020-03-20T11:48:32Z
dc.date.awarded
dc.date.completed
dc.date.registered	1-1-2018
dc.description.abstract	newline
dc.description.note
dc.format.accompanyingmaterial	DVD
dc.format.dimensions
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dc.identifier.uri	http://hdl.handle.net/10603/283274
dc.language	English
dc.publisher.institution	Department of Electronics and Communication Engineering
dc.publisher.place	Kattankulathur
dc.publisher.university	SRM University
dc.relation
dc.rights	university
dc.source.university	University
dc.title	Mathematical Modeling of 3d Fully Depleted Double Gate Silicon on Insulator Mosfets with the Influence of Back Gate Bias
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dc.type.degree	Ph.D.