Growth and characterization of doped Sulphamic Acid Crystals a potential material for optoelectronic applications

Abstract

In this research work, attention has been given to grow pure and doped sulphamic acid crystals because of its characteristic structure and optoelectrical properties. Sulphamic acid (SA) crystals exhibit good thermal and dielectric properties. It is used in the field of remote sensing, scintillation detectors and telecommunication. Inorganic materials are widely used in optical communication and optical image storage due to their high melting points, high degree of chemical inertness and high mechanical strength. In the present research, pure sulphamic acid, methyl orange, safranin, reactive orange16, titanium dioxide, trimanganese tetroxide, ferrous sulphate and cobalt chloride doped sulphamic acid crystals were grown by slow evaporation technique. The starting materials used in synthesis were of high purity and repeated recrystallization has been performed to get defect free crystals. newlineThe grown crystals were subjected to characterization techniques in order to assess the properties of the crystal. The structural details of the material were studied by single crystal and powder XRD. The compositions of the crystals were determined by using Fourier transform infrared spectroscopy. A UV-Vis analysis was used for the determination of the optical quality of the crystals. Thermal analysis is used to check the thermal stability of the crystal. The dielectric measurements were carried out to know the dielectric response of the crystal at varying frequencies. The mechanical behaviour of the grown crystals was calculated using Vickers micro hardness analysis.