Growth Property Tuning and Scalable Transfer of Graphene and Mos2 At Monolayer Thickness for Electronic and Solar Cell Devices

Abstract

Two-dimensional (2D) layered materials have attracted wide research interest due to their rich exotic physical and chemical properties compared to their bulk counterparts. From the extensive collection of 2D materials, we focus our attention on two materials, graphene and molybdenum disulfide (MoS2), which have received enormous attention for nano- and opto-electronic device applications. These materials have the potential to revolutionize the electronics industry, for which materials are required at a wafer-scale or large area with good reproducibility. Among the various synthesis techniques, chemical vapor deposition (CVD) is proven to be a successful route to achieve device-quality 2D materials. Although research on the CVD of these materials is well advanced, there are still many puzzles and challenges to be solved. The goal of this thesis is to synthesize monolayers of graphene and MoS2 by CVD, develop a method for high-yield transfer, and explore the optical and electronic response of these materials both for fundamental understanding and device applications. We introduce a facile approach involving the use of oxide substrate for the growth of homogeneous MoS2 monolayers on a wafer-scale in a CVD process based on all-solid precursors. This further established a condition for in-situ defect passivation by the liberation of oxygen from the oxide substrate newline