Tailoring The Electronic Properties Of Chemical Vapor Deposition Grown Single Layer Graphene By Doping

Abstract

Since 2004, graphene became the most fascinating one atom thick two-dimensional newline(2D) material which offers high carrier mobility, excellent transparency (gt 97%), and ultrahigh newlinemechanical strength (~1TPa). The combination of extraordinary properties of graphene newlinecan be extremely useful in wide range of applications such as photovoltaic cells, sensors, newlinedisplay systems, energy storage devices, etc. Recently, graphene has emerged as most newlinesuitable material for the fabrication of transparent conducting electrodes (TCEs) due to high newlinetransparency and flexibility. However, zero bandgap structure with overlaps of valance and newlineconduction bands at the Dirac point limits the potential applications of graphene. On the other newlinehand, it also opens up opportunities for researchers to control the electronic band structure of newlinegraphene for desired applications. After a comprehensive literature review, it has been found newlinethat the performance of graphene device can be significantly enhanced by modulating its newlineelectrical transport properties. In this context, the doping method has been extensively newlinestudied, which can be categorized into electric-field doping, chemical doping, and newlineelectrochemical doping. Among all, chemical doping is an easy and most effective approach newlinewhich can preserve the important intrinsic properties of graphene. The primary objective of newlinethesis work is focused on modification of electrical transport properties of CVD grown newlinesingle-layer graphene by chemical doping with range of doping sources. newlineA high-quality, large-area, and uniform film of single-layer graphene (SLG) film newlinegrown on a 25and#956;m thick polycrystalline copper (Cu) substrate using inductively coupled newlineplasma-enhanced chemical vapor deposition (IC-PECVD) method. Further, grown SLG film newlinetransferred on insulating substrate (SiO2/Si) using wet transfer technique. For device newlineapplication, gold (Au) layers with 30 nm thickness were thermally evaporated on SiO2/Si newlinesupported SLG surface and used as a source and drain electrodes.