Simulation And Optimization Of High Efficient Thin Film Gallium Arsenide Solar Cell

Abstract

This thesis presents a detailed investigation into the design, optimization, and newlinecharacterization of high-efficiency thin-film Gallium Arsenide (GaAs) solar cells. A newlineprimary focus on enhancing photovoltaic performance through innovative structural newlineengineering and material selection. GaAs has direct bandgap, high absorption newlinecoefficient, and excellent radiation resistance. Due to which, it is one of the most newlinepromising materials for next-generation solar energy conversion, particularly in newlineapplications requiring lightweight and flexible energy solutions. The research explores newlinethe impact of doping concentrations, material combinations, and anti-reflection coatings newline(ARCs) on the key electrical parameters of photovoltaic (PV) devices. Through newlinesystematic modelling, the thesis identifies strategies for enhancing conversion efficiency, newlinefill factor (FF), short-circuit current (Isc), and open-circuit voltage (Voc) across different newlineconfigurations and material compositions. newlineThe research begins with the development of a 1D silicon solar cell model is newlinedeveloped and analyzed with varying doping concentrations. The study reveals that newlinedonor and acceptor concentration levels significantly affect cell resistance, thereby newlineinfluencing Voc and FF. A detailed parametric study highlights that with a donor newlineconcentration of 5×10¹and#8311; cmand#8315;³, the solar cell achieves an efficiency of 16.97%. Again, an newlineoptimum efficiency of 18.78% and FF of 92% is realized at a donor concentration of newline1×10¹and#8310; cmand#8315;³ and acceptor concentration of 5×10²and#8304; cmand#8315;³, illustrating the importance of newlineprecise doping level selection for performance optimization. newlineThe study then extends to the evaluation of both Si and GaAs solar cells integrated with newlinezinc oxide (ZnO) and silicon dioxide (SiOand#8322;) anti-reflection coatings. These wideband newlineARCs are designed to reduce reflection losses by matching the refractive index gradient newlinefrom air to the solar cell surface. Simulation results across the 200 1200 nm wavelength newlinerange show that a ZnO coating with 0.5 and#956;m thickness enables Si and GaAs solar