Study of silicon nanowires based structures for optoelectronic applications

Abstract

The aligned Si NWs have been successfully fabricated and analyzed for different etching conditions using the MACE technique. Optoelectronic characteristics like light trapping, modification in band gap of Si NWs have been successfully analyzed experimentally and theoretically on n-type and p-type Si wafers. The p-type Si NWs show a smaller optical band gap and excellent anti-reflection in comparison to the ntype Si NWs. A size dependent visible PL emission and Raman spectroscopy at room temperature from Si NWs have been analysed with varying resistivity for comparative study of quantum confinement effect through BP, Y-M, Brus and Raman line shape model. The Si NWs as good field emitter have been analysed as a function of the enhancement factor and turn on field. newline