High mobility channel materials investigation for next generation vdw negative capacitance transistors

Abstract

Conventional MOSFETs face an intrinsic limitation in power newlineconsumption due to the Boltzmann limit. This research explores material newlineselection and device design strategies to address this challenge and enable newlinelow-power transistor technology. newlineTwo-Dimensional (2D) Transition Metal Dichalcogenides (TMDs) newlinehave emerged as promising materials for overcoming short-channel effects newlineand Drain-Induced Barrier Lowering (DIBL) issues plaguing conventional newlinedevices. This work investigates TMDs as a channel material in van der Waals newline(vdW) NCFETs with a CuInP2S6 (CIPS) ferroelectric layer integrated into the newlinegate stack. To create the heterostructure within the gate stack we used newlineChemical Vapor Deposition (CVD) scheme using the fabrication tool Athena newlineSilvaco. Utilizing TCAD simulations, the research demonstrates a vdW newlineNCFET structure and validates its design through voltage-current newlinecharacteristic. Parametric analysis reveals that MoS2 exhibits exceptional newlineperformance, boasting a high on/off ratio, a narrow hysteresis loop, and a newlineremarkable transconductance of 2.36 µS/µm. Furthermore, MoS2 NCFETs newlineachieve a steep subthreshold swing of 28.54 mV/dec, indicating their newlinesuitability for logic applications even at reduced supply voltages. newline