Studies On Physico Chemical Properties Of Cuins2 Thin Film Deposited By Ultrasonic Spray Pyrolysis For Solar Cell Application

Abstract

Synthesis of CuInS2 thin films using ultrasonic spray pyrolysis system. By keeping other experimental parameters same, and varying precursors combinations of copper chloride, indium chloride and thiourea, CuInS2 thin film is successfully synthesized by UPS system at 350 OC. Pure phase formation of tetragonal CuInS2 was confirmed from JCPDS card no. (270159). As deposited films of CuInS2 showed prominent peak orientation at 27.9o (112) while other peaks were observed at 32.4 (200), 46.4 (220) and 55.1o (312). All thin films obtained were well adherent and crystalline in nature. By changing ratio of copper to indium, copper to sulphur, n-type and p-type CuInS2 thin films are observed which is confirmed by Hall-effect measurements. newlineAt equal ratio of copper and indium, CuInS2 phase is obtained. Excess indium and copper precursors give rise to further unwanted phases like InxSx or CuxS, respectively. Hence, to obtain optimized CuInS2, various parameters like temperature, thickness, solution flow rate, air pressure, etc. are varied. As deposited CuInS2 and annealing effect on CuInS2 in air and in sulphur atmosphere are studied systematically. Physical and chemical properties like structural electrical, opto-electronics i.e. photo sensing in CuInS2 thin films are observed. Morphology and chemical composition are also studied by using various characterization techniques. newlineKeywords: newlineCopper indium disulphide, ultrasonic spray pyrolysis, solar cells. newline